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Abstract

The effect of an n-type AlGaN layer on the physical properties of dual-wavelength light-emitting diode (LED) is investigated numerically. The simulation results show that compared with the conventional p-type AlGaN electron-blocking layer (EBL), the n-type AlGaN layer can improve the distribution of electrons and holes more uniformly and realize the radiation balance between electrons and holes in the quantum wells, and further reduce the efficiency dro of dual-blue wavelength LED at high current. In addition, the spontaneous emission rate of two kinds of quantum wells can be adjusted through the control of Al composition. It can be found from the results that the emission spectrum of dual-blue wavelength LED is more stable at low current with an Al composition of 0.16, while the emission spectrum is more stable at high current with an Al composition of 0.12.

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1.
Funds:Project supported by the Ministry of Education Scientific Research Foundation for Returned Students, China (Grant No. 20091001), the Production and Research Program of Guangdong Province and Ministry of Education, China (Grant No. 2009B090300338), the National Natural Science Foundation of China (Grant No. 8251063101000-007), and the Extracurricular Project for Students’ Scientific Research of South China Normal University, China (Grant No.10GDKC07).

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Vol. 61, Issue 3 - 2012-02-05

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