[1] |
Li Jing-Hui, Cao Sheng-Guo, Han Jia-Ning, Li Zhan-Hai, Zhang Zhen-Hua.Electrical contact properties of 2D metal-semiconductor heterojunctions composed of different phases of NbS2and GeS2. Acta Physica Sinica, 2024, 73(13): 137102.doi:10.7498/aps.73.20240530 |
[2] |
Wang Su-Jie, Li Shu-Qiang, Wu Xiao-Ming, Chen Fang, Jiang Feng-Yi.Study on the effect of thermal annealing process on ohmic contact performance of AuGeNi/n-AlGaInP. Acta Physica Sinica, 2020, 69(4): 048103.doi:10.7498/aps.69.20191720 |
[3] |
He Tian-Li, Wei Hong-Yuan, Li Cheng-Ming, Li Geng-Wei.Comparative study of n-GaN transition group refractory metal Ohmic electrode. Acta Physica Sinica, 2019, 68(20): 206101.doi:10.7498/aps.68.20190717 |
[4] |
Wang Chen, Xu Yi-Hong, Li Cheng, Lin Hai-Jun, Zhao Ming-Jie.Improved performance of Al/n+Ge Ohmic contact andGe n+/p diode by two-step annealing method. Acta Physica Sinica, 2019, 68(17): 178501.doi:10.7498/aps.68.20190699 |
[5] |
Wei Zheng-Hong, Yun Feng, Ding Wen, Huang Ya-Ping, Wang Hong, Li Qiang, Zhang Ye, Guo Mao-Feng, Liu Shuo, Wu Hong-Bin.Reflective Ni/Ag/Ti/Au electrode with low specific contact resistivity. Acta Physica Sinica, 2015, 64(12): 127304.doi:10.7498/aps.64.127304 |
[6] |
Zhu Yan-Xu, Cao Wei-Wei, Xu Chen, Deng Ye, Zou De-Shu.Effect of different ohmic contact pattern on GaN HEMT electrical properties. Acta Physica Sinica, 2014, 63(11): 117302.doi:10.7498/aps.63.117302 |
[7] |
Huang Ya-Ping, Yun Feng, Ding Wen, Wang Yue, Wang Hong, Zhao Yu-Kun, Zhang Ye, Guo Mao-Feng, Hou Xun, Liu Shuo.The reflectivity and ohmic contact resistivity of Ni/Ag/Ti/Au in contact with p-GaN. Acta Physica Sinica, 2014, 63(12): 127302.doi:10.7498/aps.63.127302 |
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Zhang Xiao-Fu, Li Yu-Dong, Guo Qi, Luo Mu-Chang, He Cheng-Fa, Yu Xin, Shen Zhi-Hui, Zhang Xing-Yao, Deng Wei, Wu Zheng-Xin.60Coγ-radiation effects on the ideality factor of AlxGa1?xN p-i-n solar-blind detector with high content of aluminum. Acta Physica Sinica, 2013, 62(7): 076106.doi:10.7498/aps.62.076106 |
[9] |
Li Xiao-Jing, Zhao De-Gang, He Xiao-Guang, Wu Liang-Liang, Li Liang, Yang Jing, Le Ling-Cong, Chen Ping, Liu Zong-Shun, Jiang De-Sheng.Influence of different annealing temperature and atmosphere on the Ni/Au Ohmic contact to p-GaN. Acta Physica Sinica, 2013, 62(20): 206801.doi:10.7498/aps.62.206801 |
[10] |
Yan Qi-Rong, Zhang Yong, Yan Qi-Ang, Shi Pei-Pei, Zheng Shu-Wen, Niu Qiao-Li, Li Shu-Ti, Fan Guang-Han.Effect of an asymmetry n-AlGaN layer on performance of dual-blue wavelength light-emitting diodes. Acta Physica Sinica, 2012, 61(3): 036103.doi:10.7498/aps.61.036103 |
[11] |
Pan Shu-Wan, Qi Dong-Feng, Chen Song-Yan, Li Cheng, Huang Wei, Lai Hong-Kai.Se ultrathin film growth on Si(100) substrate and its application in Ti/n-Si(100) ohmic contact. Acta Physica Sinica, 2011, 60(9): 098108.doi:10.7498/aps.60.098108 |
[12] |
Wang Guang-Xu, Jiang Feng-Yi, Feng Fei-Fei, Liu Jun-Lin, Qiu Chong.N-polar n-type ohmic contact of GaN-based LED on Si substrate. Acta Physica Sinica, 2010, 59(8): 5706-5709.doi:10.7498/aps.59.5706 |
[13] |
Huang Wei, Chen Zhi-Zhan, Chen Yi, Shi Er-Wei, Zhang Jing-Yu, Liu Qing-Feng, Liu Qian.Effect of Ni thickness on the contact properties of Ni/6H-SiC analyzed by combinatorial method. Acta Physica Sinica, 2010, 59(5): 3466-3472.doi:10.7498/aps.59.3466 |
[14] |
Mao Qing-Hua, Jiang Feng-Yi, Cheng Hai-Ying, Zheng Chang-Da.p-AlGaN electron blocking layer with different Al fractions on green InGaN/GaN LEDs grown on Si substrates. Acta Physica Sinica, 2010, 59(11): 8078-8082.doi:10.7498/aps.59.8078 |
[15] |
Lü Ling, Gong Xin, Hao Yue.Properties of p-type GaN etched by inductively coupled plasma and their improvement. Acta Physica Sinica, 2008, 57(2): 1128-1132.doi:10.7498/aps.57.1128 |
[16] |
Ding Zhi-Bo, Wang Kun, Chen Tian-Xiang, Chen Di, Yao Shu-De.Investigation on the formation mechanism and diffusion of the electrode metal of oxidized Au/Ni/p-GaN ohmic contact in different alloying time. Acta Physica Sinica, 2008, 57(4): 2445-2449.doi:10.7498/aps.57.2445 |
[17] |
You Da, Xu Jin-Tong, Tang Ying-Wen, He Zheng, Xu Yun-Hua, Gong Hai-Mei.Research of two-dimensional hole gas in p-GaN/Al0.35Ga0.65N/GaN strained quantum-well. Acta Physica Sinica, 2006, 55(12): 6600-6605.doi:10.7498/aps.55.6600 |
[18] |
Kong Yue-Chan, Zheng You-Dou, Zhou Chun-Hong, Deng Yong-Zhen, Gu Shu-Lin, Shen Bo, Zhang Rong, Han Ping, Jiang Ruo-Lian, Shi Yi.Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AlGaN/GaN heterostruture. Acta Physica Sinica, 2004, 53(7): 2320-2324.doi:10.7498/aps.53.2320 |
[19] |
Kong Yue-Chan, Zheng You-Dou, Chu Rong-Ming, Gu Shu-Lin.Influnce of Al-content on the property of the two-dimensional electron gases in AlxGa1-xN/GaN heterostructures. Acta Physica Sinica, 2003, 52(7): 1756-1760.doi:10.7498/aps.52.1756 |
[20] |
WANG YIN-YUE, ZHEN CONG-MIAN, GONG HENG-XIANG, YAN ZHI-JUN, WANG YA-FAN, LIU XUE-QIN, YANG YING-HU, HE SHAN-HU.MEASUREMENT OF THE SPECIFIC CONTACT RESISTANCE OF Au/Ti/p-DIAMOND USING TRANSMIS SION LINE MODEL. Acta Physica Sinica, 2000, 49(7): 1348-1351.doi:10.7498/aps.49.1348 |