[1] |
Pu Shi, Xiao Bo-Wen, Zhou Jian, Zhou Ya-Jin.Coherent photons induced high energy reactions in ultraperipheral heavy ion collisions. Acta Physica Sinica, 2023, 72(7): 072503.doi:10.7498/aps.72.20230074 |
[2] |
Wang Guo-Dong, Cheng Rui, Wang Zhao, Zhou Ze-Xian, Luo Xia-Hui, Shi Lu-Lin, Chen Yan-Hong, Lei Yu, Wang Yu-Yu, Yang Jie.Target polarization effect on energy loss of O5+ions near Bohr velocity in low density hydrogen plasma. Acta Physica Sinica, 2023, 72(4): 043401.doi:10.7498/aps.72.20221875 |
[3] |
Liu Heng, Li Ye, Du Meng-Chao, Qiu Peng, He Ying-Feng, Song Yi-Meng, Wei Hui-Yun, Zhu Xiao-Li, Tian Feng, Peng Ming-Zeng, Zheng Xin-He.Atomic layer deposition of AlGaN alloy and its application in quantum dot sensitized solar cells. Acta Physica Sinica, 2023, 72(13): 137701.doi:10.7498/aps.72.20230113 |
[4] |
Zhang Xue-Bing, Liu Nai-Zhang, Yao Ruo-He.Polar optical phonon scattering of two-dimensional electron gas in AlGaN/GaN high electron mobility transistor. Acta Physica Sinica, 2020, 69(15): 157303.doi:10.7498/aps.69.20200250 |
[5] |
Liu Bo-Yang, Song Wen-Tao, Liu Zheng-Hui, Sun Xiao-Juan, Wang Kai-Ming, Wang Ya-Kun, Zhang Chun-Yu, Chen Ke-Bei, Xu Geng-Zhao, Xu Ke, Li Da-Bing.Characterization of phase separation on AlGaN surfaces byin-situphotoluminescence spectroscopy and high spatially resolved surface potential images. Acta Physica Sinica, 2020, 69(12): 127302.doi:10.7498/aps.69.20200099 |
[6] |
Shen Zhen, Chen Cheng-Cheng, Wang Ru-Zhi, Wang Bo, Yan Hui.Preparations and field emission properties of multilayer AlGaN nanofilm. Acta Physica Sinica, 2016, 65(23): 236803.doi:10.7498/aps.65.236803 |
[7] |
Zhao Zheng-Yin, Wang Hong-Ling, Li Ming.Rashba spin splitting in the Al0.6Ga0.4N/GaN/Al0.3Ga0.7N/Al0.6Ga0.4N quantum well. Acta Physica Sinica, 2016, 65(9): 097101.doi:10.7498/aps.65.097101 |
[8] |
Wang Xian-Bin, Zhao Zheng-Ping, Feng Zhi-Hong.Simulation study of two-dimensional electron gas in N-polar GaN/AlGaN heterostructure. Acta Physica Sinica, 2014, 63(8): 080202.doi:10.7498/aps.63.080202 |
[9] |
Wang Xiao-Yong, Chong Ming, Zhao De-Gang, Su Yan-Mei.Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact. Acta Physica Sinica, 2012, 61(21): 217302.doi:10.7498/aps.61.217302 |
[10] |
Liu Hong-Xia, Gao Bo, Zhuo Qing-Qing, Wang Yong-Huai.Influence of polarization effects on photoelectric response of AlGaN/GaN heterojunction p-i-n photodetectors. Acta Physica Sinica, 2012, 61(5): 057802.doi:10.7498/aps.61.057802 |
[11] |
Gao Rui-Jun, Ge Zi-Ming.Triple differential cross sections of the (e, 2e) reaction for electron impact Ar in a coplanar asymmetric geometry. Acta Physica Sinica, 2010, 59(3): 1702-1706.doi:10.7498/aps.59.1702 |
[12] |
Tang Nai-Yun.Spin polarized current transport and charge polarization effect in ferromagnetic GaMnN resonant tunneling diode. Acta Physica Sinica, 2009, 58(5): 3397-3401.doi:10.7498/aps.58.3397 |
[13] |
Gu Xiao-Ling, Guo Xia, Wu Di, Li Yi-Bo, Shen Guang-Di.Dependence of properties of GaN-based light emitting diodes on the surface InGaN thickness. Acta Physica Sinica, 2008, 57(2): 1220-1223.doi:10.7498/aps.57.1220 |
[14] |
Zhou Li-Xia, Yan You-Guo.Polarization effect and post-collisional interaction in (e, 2e) reaction process for He and Ar in coplanar asymmetric geometry. Acta Physica Sinica, 2008, 57(12): 7619-7622.doi:10.7498/aps.57.7619 |
[15] |
Zhou Zhong-Tang, Guo Li-Wei, Xing Zhi-Gang, Ding Guo-Jian, Tan Chang-Lin, Lü Li, Liu Jian, Liu Xin-Yu, Jia Hai-Qiang, Chen Hong, Zhou Jun-Ming.The transport property of two dimensional electron gas in AlGaN/AlN/GaN structure. Acta Physica Sinica, 2007, 56(10): 6013-6018.doi:10.7498/aps.56.6013 |
[16] |
Shu Bin, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying.Mathematical model of DC characteristic of SiGe charge injection transistors. Acta Physica Sinica, 2007, 56(2): 1105-1109.doi:10.7498/aps.56.1105 |
[17] |
Zhou Mei, Zuo Shu-Hua, Zhao De-Gang.A new Schottky barrier structure of GaN-based ultraviolet photodetector. Acta Physica Sinica, 2007, 56(9): 5513-5517.doi:10.7498/aps.56.5513 |
[18] |
Xie Zi-Li, Zhang Rong, Xiu Xiang-Qian, Han Ping, Liu Bin, Chen Lin, Yu Hui-Qiang, Jiang Ruo-Lian, Shi Yi, Zheng You-Dou.MOCVD growth and characteristics of high quality AlGaN used in the DBR structure of ultraviolet detector. Acta Physica Sinica, 2007, 56(11): 6717-6721.doi:10.7498/aps.56.6717 |
[19] |
Kong Yue-Chan, Zheng You-Dou, Zhou Chun-Hong, Deng Yong-Zhen, Gu Shu-Lin, Shen Bo, Zhang Rong, Han Ping, Jiang Ruo-Lian, Shi Yi.Influence of polarizations and doping in AlGaN barrier on the two-dimensional electron-gas in AlGaN/GaN heterostruture. Acta Physica Sinica, 2004, 53(7): 2320-2324.doi:10.7498/aps.53.2320 |
[20] |
Li Pei-Xian, Hao Yue, Fan Long, Zhang Jin-Cheng, Zhang Jin-Feng, Zhang Xiao-Ju.AlGaN/GaN heterojunction wavefunction half analytic model based on quantum distu rbance. Acta Physica Sinica, 2003, 52(12): 2985-2988.doi:10.7498/aps.52.2985 |