[1] |
Jiang Nan, Li Ao-Lin, Qu Shui-Xian, Gou Si, Ouyang Fang-Ping.First principles study of magnetic transition of strain induced monolayer NbSi2N4. Acta Physica Sinica, 2022, 71(20): 206303.doi:10.7498/aps.71.20220939 |
[2] |
Qiao Jian-Liang, Xu Yuan, Gao You-Tang, Niu Jun, Chang Ben-Kang.Quantum efficiency for reflection-mode varied doping negative-electron-affinity GaN photocathode. Acta Physica Sinica, 2017, 66(6): 067903.doi:10.7498/aps.66.067903 |
[3] |
Cao Ru-Nan, Xu Fei, Zhu Jia-Bin, Ge Sheng, Wang Wen-Zhen, Xu Hai-Tao, Xu Run, Wu Yang-Lin, Ma Zhong-Quan, Hong Feng, Jiang Zui-Min.Temperature-dependent time response characteristic of photovoltaic performance in planar heterojunction perovskite solar cell. Acta Physica Sinica, 2016, 65(18): 188801.doi:10.7498/aps.65.188801 |
[4] |
Song Jian-Jun, Bao Wen-Tao, Zhang Jing, Tang Zhao-Huan, Tan Kai-Zhou, Cui Wei, Hu Hui-Yong, Zhang He-Ming.Double ellipsoid model for conductivity effective mass along [110] orientation in (100) Si-based strained p-channel metal-oxide-semiconductor. Acta Physica Sinica, 2016, 65(1): 018501.doi:10.7498/aps.65.018501 |
[5] |
Zhao Cong, Meng Qing-Yu, Sun Wen-Jun.Luminescence properties of Eu3+ doped CaMoO4 micron phosphors. Acta Physica Sinica, 2015, 64(10): 107803.doi:10.7498/aps.64.107803 |
[6] |
Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin.Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica, 2015, 64(3): 038501.doi:10.7498/aps.64.038501 |
[7] |
Ding Mei-Bin, Lou Chao-Gang, Wang Qi-Long, Sun Qiang.Influence of quantum wells on the quantum efficiency of GaAs solar cells. Acta Physica Sinica, 2014, 63(19): 198502.doi:10.7498/aps.63.198502 |
[8] |
Liu Wei-Feng, Song Jian-Jun.Hole quantization and conductivity effective mass of the inversion layer in (001) strained p-channel metal-oxid-semiconductor. Acta Physica Sinica, 2014, 63(23): 238501.doi:10.7498/aps.63.238501 |
[9] |
Chen Xin-Long, Zhao Jing, Chang Ben-Kang, Xu Yuan, Zhang Yi-Jun, Jin Mu-Chun, Hao Guang-Hui.Comparison between exponential-doping reflection-mode GaAlAs and GaAs photocathodes. Acta Physica Sinica, 2013, 62(3): 037303.doi:10.7498/aps.62.037303 |
[10] |
Cai Zhi-Peng, Yang Wen-Zheng, Tang Wei-Dong, Hou Xun.Theoretical analysis of response characteristics for the large exponential-doping transmission-mode GaAs photocathodes. Acta Physica Sinica, 2012, 61(18): 187901.doi:10.7498/aps.61.187901 |
[11] |
Guo Xiang-Yang, Du Xiao-Qing, Chang Ben-Kang, Qiao Jian-Liang, Qian Yun-Sheng, Wang Xiao-Hui.Quantum efficiency recovery of reflection-mode NEA GaN photocathode. Acta Physica Sinica, 2011, 60(1): 017903.doi:10.7498/aps.60.017903 |
[12] |
Du Xiao-Qing, Wang Xiao-Hui, Chang Ben-Kang, Qian Yun-Sheng, Gao Pin, Zhang Yi-Jun, Guo Xiang-Yang.Comparison between gradient-doping and uniform-doping GaN photocathodes. Acta Physica Sinica, 2011, 60(4): 047901.doi:10.7498/aps.60.047901 |
[13] |
Zhang Yi-Jun, Niu Jun, Zhao Jing, Zou Ji-Jun, Chang Ben-Kang.Effect of exponential-doping structure on quantum yield of transmission-mode GaAs photocathodes. Acta Physica Sinica, 2011, 60(6): 067301.doi:10.7498/aps.60.067301 |
[14] |
Du Xiao-Qing, Chang Ben-Kang.Revision of quantum efficiency formula for negative electron affinity photocathodes. Acta Physica Sinica, 2009, 58(12): 8643-8650.doi:10.7498/aps.58.8643 |
[15] |
Yao Wen-Jie, Yu Zhong-Yuan, Liu Yu-Min, Lu Peng-Fei.Effect of wire width on strain distribution and bandgap in quantum-wire nanostructures based on continuum elasticity theory. Acta Physica Sinica, 2009, 58(2): 1185-1189.doi:10.7498/aps.58.1185 |
[16] |
Niu Jun, Yang Zhi, Chang Ben-Kang, Qiao Jian-Liang, Zhang Yi-Jun.Study on the model of quantum efficiency of reflective varied doping GaAs photocathode. Acta Physica Sinica, 2009, 58(7): 5002-5006.doi:10.7498/aps.58.5002 |
[17] |
Zhou Mei, Zhao De-Gang.Effect of p-GaN layer thickness on the performance of p-i-n structure GaN ultraviolet photodetectors. Acta Physica Sinica, 2008, 57(7): 4570-4574.doi:10.7498/aps.57.4570 |
[18] |
Zou Ji-Jun, Chang Ben-Kang, Yang Zhi.Theoretical calculation of quantum yield for exponential-doping GaAs photocathodes. Acta Physica Sinica, 2007, 56(5): 2992-2997.doi:10.7498/aps.56.2992 |
[19] |
Liu Yu-Min, Yu Zhong-Yuan, Yang Hong-Bo, Huang Yong-Zhen.Effect of the longitudinal and transverse stacking period of InAs/GaAs quantum dots on the distribution of strain field. Acta Physica Sinica, 2006, 55(10): 5023-5029.doi:10.7498/aps.55.5023 |
[20] |
Zhang Kai-Xiao, Chen Dun-Jun, Shen Bo, Tao Ya-Qi, Wu Xiao-Shan, Xu Jin, Zhang Rong, Zheng You-Dou.The effects of passivation and temperature on the barrier strain of Al0.22Ga0.78N/GaN heterostructures. Acta Physica Sinica, 2006, 55(3): 1402-1406.doi:10.7498/aps.55.1402 |