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Liu Cheng, Li Ming, Wen Zhang, Gu Zhao-Yuan, Yang Ming-Chao, Liu Wei-Hua, Han Chuan-Yu, Zhang Yong, Geng Li, Hao Yue.Establishment of composite leakage model and design of GaN Schottky barrier diode with stepped field plate. Acta Physica Sinica, 2022, 71(5): 057301.doi:10.7498/aps.71.20211917 |
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Wang Hai-Bo, Wan Li-Juan, Fan Min, Yang Jin, Lu Shi-Bin, Zhang Zhong-Xiang.Barrier-tunable gallium oxide Schottky diode. Acta Physica Sinica, 2022, 71(3): 037301.doi:10.7498/aps.71.20211536 |
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Peng Chao, Lei Zhi-Feng, Zhang Zhan-Gang, He Yu-Juan, Chen Yi-Qiang, Lu Guo-Guang, Huang Yun.Damage mechanism of SiC Schottky barrier diode irradiated by heavy ions. Acta Physica Sinica, 2022, 71(17): 176101.doi:10.7498/aps.71.20220628 |
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.Composite device model and quasi-vertical GaN SBD with stepped field plate achieving BFOM of 73.81MW/cm2. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211917 |
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.Barrier Tunable Gallium oxide Schottky diode. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211536 |
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Du Yuan-Yuan, Zhang Chun-Lei, Cao Xue-Lei.-ray detector based on n-type 4H-SiC Schottky barrier diode. Acta Physica Sinica, 2016, 65(20): 207301.doi:10.7498/aps.65.207301 |
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Zhao Yu, Wei Ai-Xiang, Liu Jun.Junction temperature measurement of light-emitting diodes using temperature-dependent capacitance. Acta Physica Sinica, 2015, 64(11): 118501.doi:10.7498/aps.64.118501 |
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Sun Peng, Du Lei, He Liang, Chen Wen-Hao, Liu Yu-Dong, Zhao Ying.Radiation degradation mechanism of pn-junction diode based on 1/f noise variation. Acta Physica Sinica, 2012, 61(12): 127808.doi:10.7498/aps.61.127808 |
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Zhang Lin, Xiao Jian, Qiu Yang-Zhang, Cheng Hong-Liang.Radition effect on Ti/4H-SiC SBD of gamma-ray,electrons and neutrons. Acta Physica Sinica, 2011, 60(5): 056106.doi:10.7498/aps.60.056106 |
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Chen Yi-Xin, Shen Guang-Di, Gao Zhi-Yuan, Guo Wei-Ling, Zhang Guang-Chen, Han Jun, Zhu Yan-Xu.Relationship between light efficiency and juction temperature of high power AlGaInP light-emitting diode. Acta Physica Sinica, 2011, 60(8): 087206.doi:10.7498/aps.60.087206 |
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Ma Li, Wang Dong-Fang, Gao Yong, Zhang Ru-Liang.Effects of p and n pillar widths on electrical characteristicsof super junction SiGe power diodes. Acta Physica Sinica, 2011, 60(4): 047303.doi:10.7498/aps.60.047303 |
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Zhang Lin, Han Chao, Ma Yong-Ji, Zhang Yi-Men, Zhang Yu-Ming.Gamma-ray radiation effect on Ni/4H-SiC SBD. Acta Physica Sinica, 2009, 58(4): 2737-2741.doi:10.7498/aps.58.2737 |
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Ma Li, Gao Yong.Semi-super junction SiGe high voltage fast and soft recovery switching diodes. Acta Physica Sinica, 2009, 58(1): 529-535.doi:10.7498/aps.58.529 |
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Halimulati, Abai, Baishan, Aimaiti.Boundary alternating current characteristics of an ideal p-n junction diode. Acta Physica Sinica, 2008, 57(2): 1161-1165.doi:10.7498/aps.57.1161 |
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Liu Ming, Liu Hong, He Yu-Liang.The I-V characteristics of nano-silicon/crystal silicon hetero-junction. Acta Physica Sinica, 2003, 52(11): 2875-2878.doi:10.7498/aps.52.2875 |
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LI HONG-WEI, WANG TAI-HONG.CURRENT TRANSPORT THROUGH STACKED InAs QUANTUM DOTS EMBEDDED IN A SCHOTTKY BARRIER. Acta Physica Sinica, 2001, 50(12): 2506-2510.doi:10.7498/aps.50.2506 |
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LI HONG-WEI, WANG TAI-HONG.THE INFLUENCE OF InAs QUANTUM DOTS ON THE TRANSPORT PROPERTIES OF SCHOTTKY DIODE. Acta Physica Sinica, 2001, 50(12): 2501-2505.doi:10.7498/aps.50.2501 |
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YANG YU-FEN.A PROPOSAL OF DOUBLE HETEROJUNCTION DOUBLE DRIFT-REGION InP/InGaAsP/InP AVALANCHE DIODE. Acta Physica Sinica, 1981, 30(6): 794-801.doi:10.7498/aps.30.794 |
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LIN HONG-YI.AN INVESTIGATION OF THE IMPURITY PROFILE OF THE 4mm BAND SILICON AVALANCHE DIODE BY MEANS OF THE SCHOTTKY BARRIER CHARACTERISTICS. Acta Physica Sinica, 1978, 27(3): 291-302.doi:10.7498/aps.27.291 |
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