[1] |
Zhang Leng, Shen Yu-Hao, Tang Chao-Yang, Wu Kong-Ping, Zhang Peng-Zhan, Liu Fei, Hou Ji-Wei.Effect of uniaxial strain on Hole mobility of Sb2Se3. Acta Physica Sinica, 2024, 73(11): 117101.doi:10.7498/aps.73.20240175 |
[2] |
Zhang Leng, Zhang Peng-Zhan, Liu Fei, Li Fang-Zheng, Luo Yi, Hou Ji-Wei, Wu Kong-Ping.Carrier mobility in doped Sb2Se3based on deformation potential theory. Acta Physica Sinica, 2024, 73(4): 047101.doi:10.7498/aps.73.20231406 |
[3] |
Chen Yong-Liang, Tang Ya-Wen, Chen Pei-Run, Zhang Li, Liu Qi, Zhao Ying, Huang Qian, Zhang Xiao-Dan.Progress in perovskite solar cells based on different buffer layer materials. Acta Physica Sinica, 2020, 69(13): 138401.doi:10.7498/aps.69.20200543 |
[4] |
Di Lin-Jia, Dai Xian-Ying, Song Jian-Jun, Miao Dong-Ming, Zhao Tian-Long, Wu Shu-Jing, Hao Yue.Calculations of energy band structure and mobility in critical bandgap strained Ge1-xSnx based on Sn component and biaxial tensile stress modulation. Acta Physica Sinica, 2018, 67(2): 027101.doi:10.7498/aps.67.20171969 |
[5] |
Xiao Di, Wang Dong-Ming, Li Xun, Li Qiang, Shen Kai, Wang De-Zhao, Wu Ling-Ling, Wang De-Liang.Nickel oxide as back surface field buffer layer in CdTe thin film solar cell. Acta Physica Sinica, 2017, 66(11): 117301.doi:10.7498/aps.66.117301 |
[6] |
Lü Yi, Zhang He-Ming, Hu Hui-Yong, Yang Jin-Yong, Yin Shu-Juan, Zhou Chun-Yu.A Model of channel current for uniaxially strained Si NMOSFET. Acta Physica Sinica, 2015, 64(19): 197301.doi:10.7498/aps.64.197301 |
[7] |
Yang Peng, Lü Yan-Wu, Wang Xin-Bo.Effect of inserted AlN layer on the two-dimensional electron gas in AlxGa1-xN/AlN/GaN. Acta Physica Sinica, 2015, 64(19): 197303.doi:10.7498/aps.64.197303 |
[8] |
Bai Min, Xuan Rong-Xi, Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Shu Bin.Hole scattering and mobility in compressively strained Ge/(001)Si1-xGex. Acta Physica Sinica, 2015, 64(3): 038501.doi:10.7498/aps.64.038501 |
[9] |
Gong Wei, Xu Zheng, Zhao Su-Ling, Liu Xiao-Dong, Yang Qian-Qian, Fan Xing.Effects of NPB anode buffer layer on the performances of inverted bulk heterojunction polymer solar cells. Acta Physica Sinica, 2014, 63(7): 078801.doi:10.7498/aps.63.078801 |
[10] |
Gao Ya-Na, Li Xi-Feng, Zhang Jian-Hua.Solution-processed high performance HIZO thin film transistor with AZO gate dielectric. Acta Physica Sinica, 2014, 63(11): 118502.doi:10.7498/aps.63.118502 |
[11] |
Dong Hai-Ming.Investigation on mobility of single-layer MoS2 at low temperature. Acta Physica Sinica, 2013, 62(20): 206101.doi:10.7498/aps.62.206101 |
[12] |
Yu Huang-Zhong.Measurement of the hole mobility in the blend system by space charge limited current. Acta Physica Sinica, 2012, 61(8): 087204.doi:10.7498/aps.61.087204 |
[13] |
Zhang Jin-Feng, Wang Ping-Ya, Xue Jun-Shuai, Zhou Yong-Bo, Zhang Jin-Cheng, Hao Yue.High electron mobility lattice-matched InAlN/GaN materials. Acta Physica Sinica, 2011, 60(11): 117305.doi:10.7498/aps.60.117305 |
[14] |
Liu Rui, Xu Zheng, Zhao Su-Ling, Zhang Fu-Jun, Cao Xiao-Ning, Kong Chao, Cao Wen-Zhe, Gong Wei.Inserting various cathodic buffer layers to enhancethe performance of Pentacene/C60based organic solar cells. Acta Physica Sinica, 2011, 60(5): 058801.doi:10.7498/aps.60.058801 |
[15] |
Li Fei, Xiao Liu, Liu Pu-Kun, Yi Hong-Xia, Wan Xiao-Sheng.Simple theory of space-charge-limited current between concentric sphere. Acta Physica Sinica, 2011, 60(9): 097901.doi:10.7498/aps.60.097901 |
[16] |
Wei Wei, Liu Ming, Qu Sheng-Wei, Zhang Qing-Yu.Photoluminescence of as-grown and annealed ZnO films on Ti-buffered Si(111) substrates. Acta Physica Sinica, 2009, 58(8): 5736-5743.doi:10.7498/aps.58.5736 |
[17] |
Xie Qing-Lian, Yan Shao-Lin, Zhao Xin-Jie, Fang Lan, Ji Lu, Zhang Yu-Ting, You Shi-Tou, Li Jia-Lei, Zhang Xu, Zhou Tie-Ge, Zuo Tao, Yue Hong-Wei.Effects of annealing of r-cut sapphire substrate on its surface morphology and the growth of CeO2 buffer layers and the Tl-2212 superconducting films. Acta Physica Sinica, 2008, 57(1): 519-525.doi:10.7498/aps.57.519 |
[18] |
Zhen Cong-Mian, Ma Li, Zhang Jin-Juan, Liu Ying, Nie Xiang-Fu.Effect of Ti(Cr) underlayer on the magnetic properties and microstructure of CoCrTa film for perpendicular magnetic recording media. Acta Physica Sinica, 2007, 56(3): 1730-1734.doi:10.7498/aps.56.1730 |
[19] |
Dai Yue-Hua, Chen Jun-Ning, Ke Dao-Ming, Sun Jia-E, Hu Yuan.An analytical model of mobility in nano-scaled n-MOSFETs. Acta Physica Sinica, 2006, 55(11): 6090-6094.doi:10.7498/aps.55.6090 |
[20] |
LI ZHI-FENG, LU WEI, YE HONG-JUAN, YUAN XIAN-ZHANG, SHEN XUE-CHU, G.Li, S.J.Chua.OPTICAL SPECTROSCOPY STUDY ON CARRIER CONCENTRATION AND MOBILITY IN GaN. Acta Physica Sinica, 2000, 49(8): 1614-1619.doi:10.7498/aps.49.1614 |