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Tang Hai-Tao, Mi Zhuang, Wang Wen-Yu, Tang Xiang-Qian, Ye Xia, Shan Xin-Yan, Lu Xing-Hua.Low-noise preamplifier for scanning tunneling microscope. Acta Physica Sinica, 2024, 73(13): 130702.doi:10.7498/aps.73.20240560 |
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Duan Bao-Xing, Wang Jia-Sen, Tang Chun-Ping, Yang Yin-Tang.Noval carrier accumulation reverse-conducting lateral insulated gate bipolar transistor. Acta Physica Sinica, 2024, 73(15): 157301.doi:10.7498/aps.73.20240572 |
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Duan Bao-Xing, Liu Yu-Lin, Tang Chun-Ping, Yang Yin-Tang.Novel majority carrier accumulation insulated gate bipolar transistor with Schottky junction. Acta Physica Sinica, 2024, 73(7): 078501.doi:10.7498/aps.73.20231768 |
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Zhao Yi-Mo, Huang Zhi-Wei, Peng Ren-Miao, Xu Peng-Peng, Wu Qiang, Mao Yi-Chen, Yu Chun-Yu, Huang Wei, Wang Jian-Yuan, Chen Song-Yan, Li Cheng.Indium tin oxid/germanium Schottky photodetectors modulated by ultra-thin dielectric intercalation. Acta Physica Sinica, 2021, 70(17): 178506.doi:10.7498/aps.70.20210138 |
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Liu Jing, Wang Lin-Qian, Huang Zhong-Xiao.Current collapse suppression in AlGaN/GaN high electron mobility transistor with groove structure. Acta Physica Sinica, 2019, 68(24): 248501.doi:10.7498/aps.68.20191311 |
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Zhao Yi, Li Jun-Kang, Zheng Ze-Jie.Progress of the study on carrier scattering mechanisms of silicon/germanium field effect transistors. Acta Physica Sinica, 2019, 68(16): 167301.doi:10.7498/aps.68.20191146 |
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Deng Xiao-Qing, Deng Lian-Wen, He Yi-Ni, Liao Cong-Wei, Huang Sheng-Xiang, Luo Heng.Leakage current model of InGaZnO thin film transistor. Acta Physica Sinica, 2019, 68(5): 057302.doi:10.7498/aps.68.20182088 |
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Zhao Hong-Yu, Wang Di, Wei Zhi, Jin Guang-Yong.Finite element analysis and experimental study on electrical damage of silicon photodiode induced by millisecond pulse laser. Acta Physica Sinica, 2017, 66(10): 104203.doi:10.7498/aps.66.104203 |
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Liang Zhen-Jiang, Liu Hai-Xia, Niu Yan-Xiong, Yin Yi-heng.Design and performance analysis of microcavity-enhanced graphene photodetector. Acta Physica Sinica, 2016, 65(13): 138501.doi:10.7498/aps.65.138501 |
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Yang Dan, Zhang Li, Yang Sheng-Yi, Zou Bing-Suo.Low-voltage pentacene photodetector based on a vertical transistor configuration. Acta Physica Sinica, 2015, 64(10): 108503.doi:10.7498/aps.64.108503 |
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Ma Wu-Ying, Wang Zhi-Kuan, Lu Wu, Xi Shan-Bin, Guo Qi, He Cheng-Fa, Wang Xin, Liu Mo-Han, Jiang Ke.The base current broadening effect and charge separation method of gate-controlled lateral PNP bipolar transistors. Acta Physica Sinica, 2014, 63(11): 116101.doi:10.7498/aps.63.116101 |
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Ren Jian, Yan Da-Wei, Gu Xiao-Feng.Degradation mechanism of leakage current in AlGaN/GaN high electron mobility transistors. Acta Physica Sinica, 2013, 62(15): 157202.doi:10.7498/aps.62.157202 |
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Su Li-Na, Gu Xiao-Feng, Qin Hua, Yan Da-Wei.Analytical I-V model and numerical analysis of single electron transistor. Acta Physica Sinica, 2013, 62(7): 077301.doi:10.7498/aps.62.077301 |
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Wu Ping, Zhang Jie, Li Xi-Feng, Chen Ling-Xiang, Wang Lei, Lü Jian-Guo.Ultraviolet photoresponse of ZnO thin-film transistor fabricated at room temperature. Acta Physica Sinica, 2013, 62(1): 018101.doi:10.7498/aps.62.018101 |
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Zhang Xuan-Ni, Zhang Chun-Min, Ai Jing-Jing.The signal-to-noise ratio of the quarter beam of wind imaging polarization interferometer. Acta Physica Sinica, 2013, 62(3): 030701.doi:10.7498/aps.62.030701 |
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You Hai-Long, Lan Jian-Chun, Fan Ju-Ping, Jia Xin-Zhang, Zha Wei.Research on characteristics degradation of n-metal-oxide-semiconductor field-effect transistor induced by hot carrier effect due to high power microwave. Acta Physica Sinica, 2012, 61(10): 108501.doi:10.7498/aps.61.108501 |
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Yu Chen-Hui, Luo Xiang-Dong, Zhou Wen-Zheng, Luo Qing-Zhou, Liu Pei-Sheng.Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs. Acta Physica Sinica, 2012, 61(20): 207301.doi:10.7498/aps.61.207301 |
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Zhang Jin-Cheng, Mao Wei, Liu Hong-Xia, Wang Chong, Zhang Jin-Feng, Hao Yue, Yang Lin-An, Xu Sheng-Rui, Bi Zhi-Wei, Zhou Zhou, Yang Ling, Wang Hao, Yang Cui, Ma Xiao-Hua.Study on the suppression mechanism of current collapse with field-plates in GaN high-electron mobility transistors. Acta Physica Sinica, 2011, 60(1): 017205.doi:10.7498/aps.60.017205 |
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Wang Jun, Wang Lei, Dong Ye-Min, Zou Xin, Shao Li, Li Wen-Jun, Steve Yang.Mechanism and impact of the double-hump substrate current in high-voltage double diffused drain MOS transistors. Acta Physica Sinica, 2008, 57(7): 4492-4496.doi:10.7498/aps.57.4492 |
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REN HONG-XIA, HAO YUE, XU DONG-GANG.STUDY ON HOT-CARRIER-EFFECT FOR GROOVED-GATE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT-TRANSISTOR. Acta Physica Sinica, 2000, 49(7): 1241-1248.doi:10.7498/aps.49.1241 |
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