[1] |
Li Ji-Fang, Guo Hong-Xia, Ma Wu-Ying, Song Hong-Jia, Zhong Xiang-Li, Li Yang-Fan, Bai Ru-Xue, Lu Xiao-Jie, Zhang Feng-Qi.Total X-ray dose effect on graphene field effect transistor. Acta Physica Sinica, 2024, 73(5): 058501.doi:10.7498/aps.73.20231829 |
[2] |
Su Le, Wang Cai-Lin, Tan Zai-Chao, Luo Yin, Yang Wu-Hua, Zhang Chao.Establishment of analytical model for electrostatic discharge gate-to-source capacitance of power metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2024, 73(11): 118501.doi:10.7498/aps.73.20240144 |
[3] |
Tian Jin-Peng, Wang Shuo-Pei, Shi Dong-Xia, Zhang Guang-Yu.Vertical short-channel MoS2field-effect transistors. Acta Physica Sinica, 2022, 71(21): 218502.doi:10.7498/aps.71.20220738 |
[4] |
Bi Si-Han, Song Jian-Jun, Zhang Dong, Zhang Shi-Qi.A Ge-based dual channel rectified single ended Schottky barrier field effect transistor for 2.45 GHz microwave wireless energy transmission. Acta Physica Sinica, 2022, 71(20): 208401.doi:10.7498/aps.71.20220855 |
[5] |
Li Jun-Lin, Li Rui-Bin, Ding Li-Li, Chen Wei, Liu Yan.TCAD simulation analysis of vertical parasitic effect induced by pulsed γ- ray in NMOS from 180 nm to 40 nm technology nodes. Acta Physica Sinica, 2022, 71(4): 046104.doi:10.7498/aps.71.20211691 |
[6] |
.Analysis of vertical parasitic effect induced by pulsed γ- ray through TCAD Simulation in NMOS from 180nm to 40nm technology node. Acta Physica Sinica, 2021, (): .doi:10.7498/aps.70.20211691 |
[7] |
Lu Bin, Wang Da-Wei, Chen Yu-Lei, Cui Yan, Miao Yuan-Hao, Dong Lin-Peng.Capacitance model for nanowire gate-all-around tunneling field-effect-transistors. Acta Physica Sinica, 2021, 70(21): 218501.doi:10.7498/aps.70.20211128 |
[8] |
Chen Jun-Dong, Han Wei-Hua, Yang Chong, Zhao Xiao-Song, Guo Yang-Yan, Zhang Xiao-Di, Yang Fu-Hua.Recent research progress of ferroelectric negative capacitance field effect transistors. Acta Physica Sinica, 2020, 69(13): 137701.doi:10.7498/aps.69.20200354 |
[9] |
Lin Shu, Xia Ning, Wang Hong-Guang, Li Yong-Dong, Liu Chun-Liang.Multipactor susceptibility chart of coaxial transmission lines with stationary statistical modeling. Acta Physica Sinica, 2018, 67(22): 227901.doi:10.7498/aps.67.20181341 |
[10] |
Zhai Yong-Gui, Wang Rui, Wang Hong-Guang, Lin Shu, Chen Kun, Li Yong-Dong.Multipactor in parallel-plate transmission line partially filled with dielectric material. Acta Physica Sinica, 2018, 67(15): 157901.doi:10.7498/aps.67.20180351 |
[11] |
Zhang Jin-Feng, Yang Peng-Zhi, Ren Ze-Yang, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Xu Lei, Hao Yue.Characterization of high-transconductance long-channel hydrogen-terminated polycrystal diamond field effect transistor. Acta Physica Sinica, 2018, 67(6): 068101.doi:10.7498/aps.67.20171965 |
[12] |
Ren Ze-Yang, Zhang Jin-Feng, Zhang Jin-Cheng, Xu Sheng-Rui, Zhang Chun-Fu, Quan Ru-Dai, Hao Yue.Characteristics of H-terminated single crystalline diamond field effect transistors. Acta Physica Sinica, 2017, 66(20): 208101.doi:10.7498/aps.66.208101 |
[13] |
Hao Min-Ru, Hu Hui-Yong, Liao Chen-Guang, Wang Bin, Zhao Xiao-Hong, Kang Hai-Yang, Su Han, Zhang He-Ming.Influence of -ray total dose radiation effect on the tunneling gate current of the uniaxial strained Si nanometer n-channel metal-oxide-semiconductor field-effect transistor. Acta Physica Sinica, 2017, 66(7): 076101.doi:10.7498/aps.66.076101 |
[14] |
Yang Jun, Zhang Xi, Miao Ren-De.Barrier-dependent tunneling magnetoresistance reversal effect in spin field effect transistors. Acta Physica Sinica, 2014, 63(21): 217202.doi:10.7498/aps.63.217202 |
[15] |
Dong Jing, Chai Yu-Hua, Zhao Yue-Zhi, Shi Wei-Wei, Guo Yu-Xiu, Yi Ming-Dong, Xie Ling-Hai, Huang Wei.The progress of flexible organic field-effect transistors. Acta Physica Sinica, 2013, 62(4): 047301.doi:10.7498/aps.62.047301 |
[16] |
Nie Guo-Zheng, Peng Jun-Biao, Zhou Ren-Long.Organic field-effect transistor with low-cost CuI/Al bilayer electrode. Acta Physica Sinica, 2011, 60(12): 127304.doi:10.7498/aps.60.127304 |
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, Zhao Su-Ling, Xu Zheng, Yao Jiang-Feng, Zhang Fu-Jun, Tian Xue-Yan.Non-solvent addition induced self-organization for enhancement of performance of poly(3-hexylthiophene) organic field-effect transistors. Acta Physica Sinica, 2011, 60(3): 037201.doi:10.7498/aps.60.037201 |
[18] |
Wu Tie-Feng, Zhang He-Ming, Wang Guan-Yu, Hu Hui-Yong.Gate tunneling current predicting model of strained Si for scaled metal-oxide semiconductor field effect transistor. Acta Physica Sinica, 2011, 60(2): 027305.doi:10.7498/aps.60.027305 |
[19] |
He Li, Zhang Li-Wei, Xu Jing-Ping, Wang You-Zhen.The tunneling properties of the bilayer structure composed of single negative materials based on transmission lines. Acta Physica Sinica, 2010, 59(9): 6106-6110.doi:10.7498/aps.59.6106 |
[20] |
Liu Hong, Yin Hai-Jian, Xia Shu-Ning.Electrical properties of the deformed carbon nanotube field-effect transistors. Acta Physica Sinica, 2009, 58(12): 8489-8500.doi:10.7498/aps.58.8489 |