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Zhou Yang, Ren Xin-Gang, Yan Ye-Qiang, Ren Hao, Du Hong-Mei, Cai Xue-Yuan, Huang Zhi-Xiang.Physical mechanism of perovskite solar cell based on double electron transport layer. Acta Physica Sinica, 2022, 71(20): 208802.doi:10.7498/aps.71.20220725 |
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Chen Jun-Fan, Ren Hui-Zhi, Hou Fu-Hua, Zhou Zhong-Xin, Ren Qian-Shang, Zhang De-Kun, Wei Chang-Chun, Zhang Xiao-Dan, Hou Guo-Fu, Zhao Ying.Passivation optimization and performance improvement of planar a-Si:H/c-Si heterojunction cells in perovskite/silicon tandem solar cells. Acta Physica Sinica, 2019, 68(2): 028101.doi:10.7498/aps.68.20181759 |
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Wan Ya-Zhou, Gao Ming, Li Yong, Guo Hai-Bo, Li Yong-Hua, Xu Fei, Ma Zhong-Quan.First principle study of ternary combined-state and electronic structure in amorphous silica. Acta Physica Sinica, 2017, 66(18): 188802.doi:10.7498/aps.66.188802 |
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Zheng Xue, Yu Xue-Gong, Yang De-Ren.Passivation property of -Si:H/SiNx stack-layer film in crystalline silicon solar cells. Acta Physica Sinica, 2013, 62(19): 198801.doi:10.7498/aps.62.198801 |
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Dai Xian-Ying, Yang Cheng, Song Jian-Jun, Zhang He-Ming, Hao Yue, Zheng Ruo-Chuan.The model of valence-band dispersion for strained Ge/Si1-xGex. Acta Physica Sinica, 2012, 61(13): 137104.doi:10.7498/aps.61.137104 |
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Ding Wen-Ge, Sang Yun-Gang, Yu Wei, Yang Yan-Bin, Teng Xiao-Yun, Fu Guang-Sheng.Current transport mechanism in silicon-rich silicon nitride/c-Si heterojunction. Acta Physica Sinica, 2012, 61(24): 247304.doi:10.7498/aps.61.247304 |
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying.Model of hole effective mass of strained Si1-xGex/(111)Si. Acta Physica Sinica, 2010, 59(1): 579-582.doi:10.7498/aps.59.579 |
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Zhong Chun-Liang, Geng Kui-Wei, Yao Ruo-He.S-shaped J-V characteristic of a-Si:H/c-Si heterojunction solar cell. Acta Physica Sinica, 2010, 59(9): 6538-6544.doi:10.7498/aps.59.6538 |
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Song Jian-Jun, Zhang He-Ming, Hu Hui-Yong, Xuan Rong-Xi, Dai Xian-Ying.Band structure of strained Si1-xGex. Acta Physica Sinica, 2009, 58(11): 7947-7951.doi:10.7498/aps.58.7947 |
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Song Jian-Jun, Zhang He-Ming, Dai Xian-Ying, Hu Hui-Yong, Xuan Rong-Xi.Band structure of strained Si/(111)Si1-xGex: a first principles investigation. Acta Physica Sinica, 2008, 57(9): 5918-5922.doi:10.7498/aps.57.5918 |
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Zhao Lei, Zhou Chun-Lan, Li Hai-Ling, Diao Hong-Wei, Wang Wen-Jing.Optimizing polymorphous silicon back surface field of a-Si(n)/c-Si(p) heterojunction solar cells by simulation. Acta Physica Sinica, 2008, 57(5): 3212-3218.doi:10.7498/aps.57.3212 |
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Hu Zhi-Hua, Liao Xian-Bo, Diao Hong-Wei, Xia Chao-Feng, Zeng Xiang-Bo, Hao Hui-Ying, Kong Guang-Lin.NIP a-Si:H solar cells on stanless steel with p-type nc-Si:H window layer. Acta Physica Sinica, 2005, 54(6): 2945-2949.doi:10.7498/aps.54.2945 |
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Hu Zhi-Hua, Liao Xian-Bo, Zeng Xiang-Bo, Xu Yan-Yue, Zhang Shi-Bin, Diao Hong-Wei, Kong Guang-Lin.Numerical simulation of nc-Si:H/ c-Si heterojunction solar cells. Acta Physica Sinica, 2003, 52(1): 217-224.doi:10.7498/aps.52.217 |
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PENG YING-CAI, XU GANG-YI, HE YU-LIANG, LIU MING, LI YUE-XIA.CARRIER TRANSPORT PROPERTIES OF THE (n)nc-Si:H/(p)c-Si HETEROJUNCTION. Acta Physica Sinica, 2000, 49(12): 2466-2471.doi:10.7498/aps.49.2466 |
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YANG YU, XIA GUAN-QUN, ZHAO GUO-QING, WANG XUN.Si+ ION IMPLANTATION INFLUENCE ON PHOTOLUMINESCENCE IN Si1-xGex/Si QUANTUM WELLS GROWN BY MOLECULAR BEAM EPITAXY. Acta Physica Sinica, 1998, 47(6): 978-984.doi:10.7498/aps.47.978 |
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HUANG JING-YUN, YE ZHI-ZHEN, QUE DUAN-LIN.CALCULATION OF CRITICAL LAYER THICKNESS BY TAKING INTO ACCOUNT THE THERMAL STRAIN IN Si1-xGex /Si STRAIN LAYER HETEROSTRUCTURES. Acta Physica Sinica, 1997, 46(10): 2010-2014.doi:10.7498/aps.46.2010 |
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CHEN GUANG-HUA, GUO YONG-PING, YAO JIANG-HONG, SONG ZHI-ZHONG, ZHANG FANG-QING.PROPERTIES OF INTERFACE OF a-Si:H/a-SiCx: H SUPERLATTICE. Acta Physica Sinica, 1994, 43(11): 1847-1853.doi:10.7498/aps.43.1847 |
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ZHANG FANG-QING, HE DE-YAN, SONG ZHI-ZHONG, KE NING, CHEN GUANG-HUA.BORON DIFFUSION IN B-DOPED a-SiC:H/UNDOPED a-Si:H HETEROJUNCTIONS. Acta Physica Sinica, 1990, 39(12): 1982-1988.doi:10.7498/aps.39.1982 |
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.LATERAL PHOTOVOLTAIC EFFECT IN a-Si:H JUNCTIONS. Acta Physica Sinica, 1989, 38(8): 1235-1244.doi:10.7498/aps.38.1235 |
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WANG WAN-LU, LIAO KE-JUN.STRESS STUDIES OF AMORPHOUS a-Si:H/a-SiNx:H HETEROJUNCTIONS AND a-Si:H, a-SiNx:H FILMS. Acta Physica Sinica, 1987, 36(12): 1529-1537.doi:10.7498/aps.36.1529 |