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Wang Xuan, Du Jian-Rong, Li Zhi-Jun, Ma Ming-Lin, Li Chun-Lai.Coexisting discharge and synchronization of heterogeneous discrete neural network with crosstalk memristor synapses. Acta Physica Sinica, 2024, 73(11): 110503.doi:10.7498/aps.73.20231972 |
[2] |
Guo Hui-Meng, Liang Yan, Dong Yu-Jiao, Wang Guang-Yi.Simplification of Chua corsage memristor and hardware implementation of its neuron circuit. Acta Physica Sinica, 2023, 72(7): 070501.doi:10.7498/aps.72.20222013 |
[3] |
Li Ce, Yang Dong-Liang, Sun Lin-Feng.Research progress of neuromorphic devices based on two-dimensional layered materials. Acta Physica Sinica, 2022, 71(21): 218504.doi:10.7498/aps.71.20221424 |
[4] |
Wang Shi-Chang, Lu Zhen-Zhou, Liang Yan, Wang Guang-Yi.Neuromorphic behaviors of N-type locally-active memristor. Acta Physica Sinica, 2022, 71(5): 050502.doi:10.7498/aps.71.20212017 |
[5] |
Hu Wei, Liao Jian-Bin, Du Yong-Qian.An analytic modeling strategy for memristor cell applicable to large-scale memristive networks. Acta Physica Sinica, 2021, 70(17): 178505.doi:10.7498/aps.70.20210116 |
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Shi Chen-Yang, Min Guang-Zong, Liu Xiang-Yang.Research progress of protein-based memristor. Acta Physica Sinica, 2020, 69(17): 178702.doi:10.7498/aps.69.20200617 |
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Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan.Analysis of memristor model with learning-experience behavior. Acta Physica Sinica, 2019, 68(19): 198502.doi:10.7498/aps.68.20190808 |
[8] |
Shao Nan, Zhang Sheng-Bing, Shao Shu-Yuan.Mathematical model of memristor with sensory memory. Acta Physica Sinica, 2019, 68(1): 018501.doi:10.7498/aps.68.20181577 |
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Liu Yi-Chun, Lin Ya, Wang Zhong-Qiang, Xu Hai-Yang.Oxide-based memristive neuromorphic synaptic devices. Acta Physica Sinica, 2019, 68(16): 168504.doi:10.7498/aps.68.20191262 |
[10] |
Chen Yi-Hao, Xu Wei, Wang Yu-Qi, Wan Xiang, Li Yue-Feng, Liang Ding-Kang, Lu Li-Qun, Liu Xin-Wei, Lian Xiao-Juan, Hu Er-Tao, Guo Yu-Feng, Xu Jian-Guang, Tong Yi, Xiao Jian.Fabrication of synaptic memristor based on two-dimensional material MXene and realization of both long-term and short-term plasticity. Acta Physica Sinica, 2019, 68(9): 098501.doi:10.7498/aps.68.20182306 |
[11] |
Xu Wei, Wang Yu-Qi, Li Yue-Feng, Gao Fei, Zhang Miao-Cheng, Lian Xiao-Juan, Wan Xiang, Xiao Jian, Tong Yi.Design of novel memristor-based neuromorphic circuit and its application in classical conditioning. Acta Physica Sinica, 2019, 68(23): 238501.doi:10.7498/aps.68.20191023 |
[12] |
Wang Wei, Zeng Yi-Cheng, Sun Rui-Ting.Research on a six-order chaotic circuit with three memristors. Acta Physica Sinica, 2017, 66(4): 040502.doi:10.7498/aps.66.040502 |
[13] |
Yuan Ze-Shi, Li Hong-Tao, Zhu Xiao-Hua.A digital-analog hybrid random number generator based on memristor. Acta Physica Sinica, 2015, 64(24): 240503.doi:10.7498/aps.64.240503 |
[14] |
Liu Dong-Qing, Cheng Hai-Feng, Zhu Xuan, Wang Nan-Nan, Zhang Chao-Yang.Research progress of memristors and memristive mechanism. Acta Physica Sinica, 2014, 63(18): 187301.doi:10.7498/aps.63.187301 |
[15] |
Liu Yu-Dong, Wang Lian-Ming.Application of memristor-based spiking neural network in image edge extraction. Acta Physica Sinica, 2014, 63(8): 080503.doi:10.7498/aps.63.080503 |
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Li Zhi-Jun, Zeng Yi-Cheng, Li Zhi-Bin.Memristive chaotic circuit based on modified SC-CNNs. Acta Physica Sinica, 2014, 63(1): 010502.doi:10.7498/aps.63.010502 |
[17] |
Xie Jian-Feng, Cao Jue-Xian.Modulation of the band structure of layered BN film with stain. Acta Physica Sinica, 2013, 62(1): 017302.doi:10.7498/aps.62.017302 |
[18] |
Jia Lin-Nan, Huang An-Ping, Zheng Xiao-Hu, Xiao Zhi-Song, Wang Mei.Progress of memristor modulated by interfacial effect. Acta Physica Sinica, 2012, 61(21): 217306.doi:10.7498/aps.61.217306 |
[19] |
Ji Gao-Feng, Liu Sheng-Li.Modified Kosterlitz-Thouless transition model for the temperature dependence of the resistivity of anisotropic superconductors. Acta Physica Sinica, 2007, 56(7): 4148-4151.doi:10.7498/aps.56.4148 |
[20] |
Shi Li-Bin, Ren Jun-Yuan, Zhang Feng-Yun, Zhang Guo-Hua, Yu Zeng-Qiang.A study on resistive transition and anisotropy of MgB2/Al2O3 superconducting thin films. Acta Physica Sinica, 2007, 56(9): 5353-5358.doi:10.7498/aps.56.5353 |