Photoelectric modulation and resistive switching characteristic of ReSe<sub>2</sub>/WSe<sub>2</sub> memtransistor

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Abstract

Memtransistor is a multiterminal device combining the concepts of memristor and field-effect transistor. Two-dimensional transition metal sulfides have unique electronic structure and properties, and they are widely used in electronic devices, energy conversions, memories and other fields. In this work, a two-dimensional ReSe ₂/WSe ₂heterostructure memtransistor is prepared, then the resistive switching characteristics under the electrical modulation, optical modulation, and electric-optical dual gate control are discussed. The results show that the gate control is an effective modulation method, which can change the on/off ratio of the device from 10 ¹to 10 ⁵. Then, the resistance and on/off ratio of the memtransistor can be controlled by changing the light wavelength and the illumination power. Moreover, the switching ratio of the device can also be changed in a range of 10 ²–10 ⁵by electric and light dual-gate control, and the reasons for the change of resistance states of the device under different modulation conditions are analyzed. Furthermore, after 225 cycles and 1.9 × 10 ⁴s, the ReSe ₂/WSe ₂heterostructure memtransistor still maintains a switch ratio close to 10 ⁴, indicating the good stability and durability of the device. It demonstrates that the ReSe ₂/WSe ₂memtransistor will be one of potential candidates for the next- generation nonvolatile memory applications.

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Authors and contacts

Corresponding author:Chen Feng-Xiang,phonixchen79@whut.edu.cn; Wang Li-Sheng,wang_lesson@whut.edu.cn

Funds:Project supported by the National Natural Science Foundation of China (Grant No. 51702245), the National Key Research and Development Program of China (Grant Nos. 2018YFE0111500, 2019YFA0704900), the Open Fund Project of State Key Laboratory of Advanced Technology for Materials Synthesis and Processing (Wuhan University of Technology), China (Grant No. 2021-KF-16), and the Fundamental Research Fund for the Central Universities, China (Grant No. WUT2021III065JC)

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	栅压V_g/V
	0	1	10	20	25
HRS阻值/Ω	6.31 × 10¹¹	4.36 × 10¹¹	1.20 × 10¹⁰	8.75 × 10⁸	5.26 × 10⁸
LRS阻值/Ω	2.37 × 10⁶	4.31 × 10⁶	5.59 × 10⁶	9.66 × 10⁶	1.12 × 10⁷
开关比	2.66 × 10⁵	1.01 × 10⁵	2.14 × 10³	9.06 × 10¹	4.70 × 10¹

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