LIN Yilei; YANG Cui; WANG Xinhuai; MAO Wei; GE Chongzhi; YU Longyang; ZHANG Chunfu; ZHANG Jincheng; HAO Yue

doi:10.7498/aps.74.20241798

Abstract

Microinverters have been widely used in distributed photovoltaic (PV) systems in recent years due to their modularity and flexibility. However, the current development of microinverter topologies faces significant challenges, such as low voltage gain and limited reliability. To solve these problems, an enhanced switched-inductor quasi-Z-Source inverter (ESL-qZSI) based on gallium nitride high electron mobility transistor (GaN HEMT) is proposed in this work. The proposed inverter introduces a novel topology that integrates an auxiliary boost unit with a switched-inductor quasi-Z-source network. This topology significantly enhances the voltage gain at low shoot-through duty ratios and reduces the voltage stress across the switching device. Additionally, the use of GaN HEMT as power switching components increases the switching frequency from the traditional 10 kHz to 100 kHz, in which a specialized negative turn-off gate driver circuit is designed to adapt the characteristics of the GaN HEMT and to ensure reliable switching operation. This increase in frequency reduces the size of passive components, such as inductors. Experimental results show that the proposed inverter achieves a boost factor of 5.75 at a shoot-through duty ratio of 0.2, which indicates that its performance is improved by 15% and 91% greater than the traditional switched-inductor-capacitor quasi-Z-source inverter (SLC-qZSI) and the traditional switched-inductor Z-source inverter (SL-ZSI), respectively. These results confirm that the proposed inverter enhances the voltage gain of existing topologies. Besides, compared with SLC-qZSI, the proposed inverter can obtain a higher efficiency of 90.5%, which shows the advantage of efficiency. In conclusion, the proposed ESL-qZSI with GaN HEMT provides a hopeful solution for high-efficiency and compact microinverter systems in photovoltaic applications.

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Authors and contacts

Corresponding author: YANG Cui, ycxd503@126.com ; WANG Xinhuai, xinhuaiwang@xidian.edu.cn ; MAO Wei, mwxidian@126.com ;

Funds: Project supported by the National Key R&D Program of China (Grant Nos. 2022YFB3604303, 2022YFB3604300) and the Science Fund for Creative Research Groups of the National Natural Science Foundation of China (Grant No. 62421005).

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参数名称	参数值
升压因子(B)	$ \dfrac{2}{1-4 D+3 D^{2}} $
电压增益(G)	$ \dfrac{2}{3 M-2} $
开关管电压应力V_sw/V_in	$ \dfrac{3 G^{2}}{2 G+2} $
C₁电压应力V_C1/V_in	$ \dfrac{1}{1-D} $
C₂电压应力V_C2/V_in	$ \dfrac{1}{1-3 D} $
C₃电压应力V_C3/V_in	$ \dfrac{2 D}{1-4 D+3 D^{2}} $
C₄电压应力V_C4/V_in	$ \dfrac{2}{1-3 D} $
D₁/D₂电压应力V_D/V_in	$ \dfrac{2}{1-4 D+3 D^{2}} $
D₃/D₄/D₅电压应力V_D/V_in	$ \dfrac{1-D}{1-4 D+3 D^{2}} $

DownLoad: CSV

参数名称	R₇/Ω	R₅/Ω	R₄/Ω	C₆/nF	C₃/nF	C₄/nF
参数值	470	10	3.3	3	100	1

DownLoad: CSV

参数名称	参数值
输入电压/V	64
开关频率/kHz	100
准Z源网络电容/μF	100
准Z源网络电感/mH	0.5
LC滤波电容/μF	20
LC滤波电感/mH	1
直通占空比D	0.2
基准频率/Hz	50

DownLoad: CSV

参数	逆变器拓扑类型
参数	SL-ZSI		SLC-qZSI	ESL-qZSI
数据类型	样机测试结果	理论计算结果	样机测试结果	样机测试结果
输入电压V_in/V	36	36	80	64
直通占空比D	0.3	0.2	0.206	0.2
调制系数M	0.7	0.8	0.794	0.8
升压因子B	13	3	5	5.75
开关频率/kHz	10	10	13.3	100
效率/%	—	—	88.5	90.5

DownLoad: CSV

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Corresponding author: YANG Cui, ycxd503@126.com ; WANG Xinhuai, xinhuaiwang@xidian.edu.cn ; MAO Wei, mwxidian@126.com ;

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