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Duan Bao-Xing, Liu Yu-Lin, Tang Chun-Ping, Yang Yin-Tang.Novel majority carrier accumulation insulated gate bipolar transistor with Schottky junction. Acta Physica Sinica, 2024, 73(7): 078501.doi:10.7498/aps.73.20231768 |
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Zhao Jian-Cheng, Wu Chao-Xing, Guo Tai-Liang.Carrier transport model of non-carrier-injection light-emitting diode. Acta Physica Sinica, 2023, 72(4): 048503.doi:10.7498/aps.72.20221831 |
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Ge Yi-Fan, Wu Yi-Ping, Zang Xiao-Fei, Yuan Ying-Hao, Chen Lin.Interaction between spoof localized surface plasmon and terahertz vortex beam. Acta Physica Sinica, 2020, 69(18): 184203.doi:10.7498/aps.69.20200695 |
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Wang Chong, Zhao Meng-Di, Pei Jiu-Qing, He Yun-Long, Li Xiang-Dong, Zheng Xue-Feng, Mao Wei, Ma Xiao-Hua, Zhang Jin-Cheng, Hao Yue.Enhancement mode AlGaN/GaN double heterostructure high electron mobility transistor with F plasma treatment. Acta Physica Sinica, 2016, 65(3): 038501.doi:10.7498/aps.65.038501 |
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Liu Chang, Lu Ji-Wu, Wu Wang-Ran, Tang Xiao-Yu, Zhang Rui, Yu Wen-Jie, Wang Xi, Zhao Yi.Gate length dependence of hot carrier injection degradation in short channel silicon on insulator planar MOSFET. Acta Physica Sinica, 2015, 64(16): 167305.doi:10.7498/aps.64.167305 |
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Chen Dong-Hai, Yang Mou, Duan Hou-Jian, Wang Rui-Qiang.Electronic transport properties of graphene pn junctions with spin-orbit coupling. Acta Physica Sinica, 2015, 64(9): 097201.doi:10.7498/aps.64.097201 |
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Huo Wen-Juan, Xie Hong-Yun, Liang Song, Zhang Wan-Rong, Jiang Zhi-Yun, Chen Xiang, Lu Dong.Uni-traveling-carrier double heterojunction phototransistor photodetector. Acta Physica Sinica, 2013, 62(22): 228501.doi:10.7498/aps.62.228501 |
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You Hai-Long, Lan Jian-Chun, Fan Ju-Ping, Jia Xin-Zhang, Zha Wei.Research on characteristics degradation of n-metal-oxide-semiconductor field-effect transistor induced by hot carrier effect due to high power microwave. Acta Physica Sinica, 2012, 61(10): 108501.doi:10.7498/aps.61.108501 |
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Sun Peng, Du Lei, He Liang, Chen Wen-Hao, Liu Yu-Dong, Zhao Ying.Radiation degradation mechanism of pn-junction diode based on 1/f noise variation. Acta Physica Sinica, 2012, 61(12): 127808.doi:10.7498/aps.61.127808 |
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Zhang Yuan, Wang Lu-Xia.Theoretical study of inelastic current in molecularnano-junction excited by infrared field. Acta Physica Sinica, 2011, 60(4): 047304.doi:10.7498/aps.60.047304 |
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He Zhi-Gang, Cheng Xing-Hua, Gong Min, Cai Juan-Lu, Shi Rui-Ying.The factors influencing spin-polarized transport in magnetic pn junction. Acta Physica Sinica, 2010, 59(9): 6521-6526.doi:10.7498/aps.59.6521 |
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Li Tong, Li Chi-Ping, Zhang Ming, Wang Bo, Yan Hui.Rectifying characteristics of La1-xSrxMnO3/TiO2(x=0.2, 0.15, 0.04) pn heterojunctions. Acta Physica Sinica, 2007, 56(7): 4132-4136.doi:10.7498/aps.56.4132 |
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Huang Wen-Bo, Peng Jun-Biao.Carrier injection process of polymer light-emitting diodes. Acta Physica Sinica, 2007, 56(5): 2974-2978.doi:10.7498/aps.56.2974 |
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Zhou Yong-Hua, Zhang Yi-Men, Zhang Yu-Ming, Meng Xiang-Zhi.Simulation and analysis of 6H-SiC pn junction ultraviolet photodetector. Acta Physica Sinica, 2004, 53(11): 3710-3715.doi:10.7498/aps.53.3710 |
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Lü Hong-Liang, Zhang Yi-Men, Zhang Yu-Ming.The simulation study of the tunneling effect in the breakdown of 4H-SiC pn junc tion diode. Acta Physica Sinica, 2003, 52(10): 2541-2546.doi:10.7498/aps.52.2541 |
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