| [1] |
Liu Xu-Yang, Zhang He-Qiu, Li Bing-Bing, Liu Jun, Xue Dong-Yang, Wang Heng-Shan, Liang Hong-Wei, Xia Xiao-Chuan.Characteristics of AlGaN/GaN high electron mobility transistor temperature sensor. Acta Physica Sinica, 2020, 69(4): 047201.doi:10.7498/aps.69.20190640 |
| [2] |
Liu Yang, Chai Chang-Chun, Yu Xin-Hai, Fan Qing-Yang, Yang Yin-Tang, Xi Xiao-Wen, Liu Sheng-Bei.Damage effects and mechanism of the GaN high electron mobility transistor caused by high electromagnetic pulse. Acta Physica Sinica, 2016, 65(3): 038402.doi:10.7498/aps.65.038402 |
| [3] |
Zhang Chao-Yu, Xiong Chuan-Bing, Tang Ying-Wen, Huang Bin-Bin, Huang Ji-Feng, Wang Guang-Xu, Liu Jun-Lin, Jiang Feng-Yi.Changes of micro zone luminescent properties and stress of GaN-based light emitting diode film grown on patterned silicon substrate, induced by the removal of the substrate and AlN buffer layer. Acta Physica Sinica, 2015, 64(18): 187801.doi:10.7498/aps.64.187801 |
| [4] |
Chen Wei-Chao, Tang Hui-Li, Luo Ping, Ma Wei-Wei, Xu Xiao-Dong, Qian Xiao-Bo, Jiang Da-Peng, Wu Feng, Wang Jing-Ya, Xu Jun.Research progress of substrate materials used for GaN-Based light emitting diodes. Acta Physica Sinica, 2014, 63(6): 068103.doi:10.7498/aps.63.068103 |
| [5] |
Huang Bin-Bin, Xiong Chuan-Bing, Zhang Chao-Yu, Huang Ji-Feng, Wang Guang-Xu, Tang Ying-Wen, Quan Zhi-Jue, Xu Long-Quan, Zhang Meng, Wang Li, Fang Wen-Qing, Liu Jun-Lin, Jiang Feng-Yi.Electroluminescence properties of vertical structure GaN based LED on silicon and copper submount at different temperatures and current densities. Acta Physica Sinica, 2014, 63(21): 217806.doi:10.7498/aps.63.217806 |
| [6] |
Chen Hao-Ran, Yang Lin-An, Zhu Zhang-Ming, Lin Zhi-Yu, Zhang Jin-Cheng.Theoretical study on degradation phenomenon on AlGaN/GaN resonant tunneling diode. Acta Physica Sinica, 2013, 62(21): 217301.doi:10.7498/aps.62.217301 |
| [7] |
Wang Du-Yang, Sun Hui-Qing, Xie Xiao-Yu, Zhang Pan-Jun.Theoretical study of luminance of GaN quantum dots planted in quantum well. Acta Physica Sinica, 2012, 61(22): 227303.doi:10.7498/aps.61.227303 |
| [8] |
Chen Jun, Fan Guang-Han, Zhang Yun-Yan.The investigation of performance improvement of GaN-based dual-wavelength light-emitting diodes with various thickness of quantum barriers. Acta Physica Sinica, 2012, 61(17): 178504.doi:10.7498/aps.61.178504 |
| [9] |
Zhang Yun-Yan, Fan Guan-Han.Theoretical study of GaN interval layers and quantum well barrier layers of different doping types in dual-wavelength LED. Acta Physica Sinica, 2011, 60(1): 018502.doi:10.7498/aps.60.018502 |
| [10] |
Wang Guang-Xu, Tao Xi-Xia, Xiong Chuan-Bing, Liu Jun-Lin, Feng Fei-Fei, Zhang Meng, Jiang Feng-Yi.Effects of Ni-assisted annealing on p-type contact resistivity of GaN-based LED films grown on Si(111) substrates. Acta Physica Sinica, 2011, 60(7): 078503.doi:10.7498/aps.60.078503 |
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Zhang Yun-Yan, Fan Guang-Han, Zhang Yong, Zheng Shu-Wen.Effect of spectrum-control in dual-wavelength light-emitting diode by doped GaN interval layer. Acta Physica Sinica, 2011, 60(2): 028503.doi:10.7498/aps.60.028503 |
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Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao.Analysis of failure mechanism of GaN-based white light-emitting diode. Acta Physica Sinica, 2010, 59(7): 5002-5009.doi:10.7498/aps.59.5002 |
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Jin Yu-Zhe, Hu Yi-Pei, Zeng Xiang-Hua, Yang Yi-Jun.Gamma radiation effect on GaN-based blue light-emitting diodes with multi-quantum well. Acta Physica Sinica, 2010, 59(2): 1258-1262.doi:10.7498/aps.59.1258 |
| [14] |
Xue Zheng-Qun, Huang Sheng-Rong, Zhang Bao-Ping, Chen Chao.Analyses of laser-induced p-type doping of GaN in the improvement of light-emitting diodes. Acta Physica Sinica, 2010, 59(2): 1268-1274.doi:10.7498/aps.59.1268 |
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Li Bing-Qian, Zheng Tong-Chang, Xia Zheng-Hao.Temperature characteristics of the forward voltage of GaN based blue light emitting diodes. Acta Physica Sinica, 2009, 58(10): 7189-7193.doi:10.7498/aps.58.7189 |
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Shen Guang-Di, Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling.Research on effects of current spreading and optimized contact scheme for high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2008, 57(1): 472-476.doi:10.7498/aps.57.472 |
| [17] |
Xiong Chuan-Bing, Jiang Feng-Yi, Fang Wen-Qing, Wang Li, Mo Chun-Lan.Change in stress of GaN light-emitting diode films during the process of transferring the film from the Si(111) growth substrate to new substrate. Acta Physica Sinica, 2008, 57(5): 3176-3181.doi:10.7498/aps.57.3176 |
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Zhang Jian-Ming, Zou De-Shu, Xu Chen, Gu Xiao-Ling, Shen Guang-Di.Effects of optimized contact scheme on the performance of high-power GaN-based light-emitting diodes. Acta Physica Sinica, 2007, 56(10): 6003-6007.doi:10.7498/aps.56.6003 |
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Liu Nai-Xin, Wang Huai-Bing, Liu Jian-Ping, Niu Nan-Hui, Han Jun, Shen Guang-Di.Growth of p-GaN at low temperature and its properties as light emitting diodes. Acta Physica Sinica, 2006, 55(3): 1424-1429.doi:10.7498/aps.55.1424 |
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Song Shu-Fang, Zhou Sheng-Qiang, Chen Wei-De, Zhu Jian-Jun, Chen Chang-Yong, Xu Zhen-Jia.RBS/channeling study and photoluminscence properties of Er-implanted GaN. Acta Physica Sinica, 2003, 52(10): 2558-2562.doi:10.7498/aps.52.2558 |
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