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Gou Shi-Long, Ma Wu-Ying, Yao Zhi-Bin, He Bao-Ping, Sheng Jiang-Kun, Xue Yuan-Yuan, Pan Chen.Radiation mechanism of gate-controlled lateral PNP bipolar transistors in the hydrogen environment. Acta Physica Sinica, 2021, 70(15): 156101.doi:10.7498/aps.70.20210351 |
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Zhu Yu-Bo, Xu Hua, Li Min, Xu Miao, Peng Jun-Biao.Analysis of low frequency noise characteristics of praseodymium doped indium gallium oxide thin film transistor. Acta Physica Sinica, 2021, 70(16): 168501.doi:10.7498/aps.70.20210368 |
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Liang Ding-Kang, Chen Yi-Hao, Xu Wei, Ji Xin-Cun, Tong Yi, Wu Guo-Dong.Ultralow-voltage albumen-gated electric-double-layer thin film transistors. Acta Physica Sinica, 2018, 67(23): 237302.doi:10.7498/aps.67.20181539 |
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Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Luo Heng, Liu Sheng, Deng Lian-Wen.Floating gate effect in amorphous InGaZnO thin-film transistor. Acta Physica Sinica, 2018, 67(4): 047302.doi:10.7498/aps.67.20172325 |
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Qin Ting, Huang Sheng-Xiang, Liao Cong-Wei, Yu Tian-Bao, Deng Lian-Wen.Analytical channel potential model of amorphous InGaZnO thin-film transistors with synchronized symmetric dual-gate. Acta Physica Sinica, 2017, 66(9): 097101.doi:10.7498/aps.66.097101 |
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Liu Yuan, He Hong-Yu, Chen Rong-Sheng, Li Bin, En Yun-Fei, Chen Yi-Qiang.Low-frequency noise in hydrogenated amorphous silicon thin film transistor. Acta Physica Sinica, 2017, 66(23): 237101.doi:10.7498/aps.66.237101 |
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Zhang Li-Rong, Ma Xue-Xue, Wang Chun-Fu, Li Guan-Ming, Xia Xing-Heng, Luo Dong-Xiang, Wu Wei-Jing, Xu Miao, Wang Lei, Peng Jun-Biao.High speed gate driver circuit basd on metal oxide thin film transistors. Acta Physica Sinica, 2016, 65(2): 028501.doi:10.7498/aps.65.028501 |
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Xu Piao-Rong, Qiang Lei, Yao Ruo-He.A technique for extracting the density of states of the linear region in an amorphous InGaZnO thin film transistor. Acta Physica Sinica, 2015, 64(13): 137101.doi:10.7498/aps.64.137101 |
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Liu Yuan, Wu Wei-Jing, Li Bin, En Yun-Fei, Wang Lei, Liu Yu-Rong.Analysis of low-frequency noise in the amorphous indium zinc oxide thin film transistors. Acta Physica Sinica, 2014, 63(9): 098503.doi:10.7498/aps.63.098503 |
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Li Xi-Feng, Xin En-Long, Shi Ji-Feng, Chen Long-Long, Li Chun-Ya, Zhang Jian-Hua.Stability of low temperature and transparent amorphous InGaZnO thin film transistor under illumination. Acta Physica Sinica, 2013, 62(10): 108503.doi:10.7498/aps.62.108503 |
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Zhu De-Ming, Men Chuan-Ling, Cao Min, Wu Guo-Dong.Ultralow-voltage in-plane-gate indium-tin-oxide thin-film transistors made of P-doped SiO2 dielectrics. Acta Physica Sinica, 2013, 62(11): 117305.doi:10.7498/aps.62.117305 |
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Xi Shan-Bin, Lu Wu, Ren Di-Yuan, Zhou Dong, Wen Lin, Sun Jing, Wu Xue.Quantitative separation of radiation induced charges for gate controlled later PNP bipolar transistors. Acta Physica Sinica, 2012, 61(23): 236103.doi:10.7498/aps.61.236103 |
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Xi Shan-Bin, Lu Wu, Wang Zhi-Kuan, Ren Di-Yuan, Zhou Dong, Wen Lin, Sun Jing.Use the subthreshold-current technique to separate radiation induced defects in gate controlled lateral pnp bipolar transistors. Acta Physica Sinica, 2012, 61(7): 076101.doi:10.7498/aps.61.076101 |
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Chen Xiao-Xue, Yao Ruo-He.DC characteristic research based on surface potential for a-Si:H thin-film transistor. Acta Physica Sinica, 2012, 61(23): 237104.doi:10.7498/aps.61.237104 |
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Qiang Lei, Yao Ruo-He.Distributions of the threshold voltage and the temperature in the channel of amorphous silicon thin film transistors. Acta Physica Sinica, 2012, 61(8): 087303.doi:10.7498/aps.61.087303 |
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Liu Zhao-Jun, Meng Zhi-Guo, Zhao Sun-Yun, Kwok Hoi Sing, Wu Chun-Ya, Xiong Shao-Zhen.Crystallized poly-silicon thin film laterally induced by the Ni/Si oxide source. Acta Physica Sinica, 2010, 59(4): 2775-2782.doi:10.7498/aps.59.2775 |
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Luo Chong, Meng Zhi-Guo, Wang Shuo, Xiong Shao-Zhen.Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution. Acta Physica Sinica, 2009, 58(9): 6560-6565.doi:10.7498/aps.58.6560 |
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Zhao Shu-Yun, Wu Chun-Ya, Li Juan, Liu Jian-Ping, Zhang Xiao-Dan, Zhang Li-Zhu, Meng Zhi-Guo, Xiong Shao-Zhen.The research on metal induced crystallization with chemical source. Acta Physica Sinica, 2006, 55(2): 825-829.doi:10.7498/aps.55.825 |
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Zhao Shu-Yun, Wu Chun-Ya, Liu Zhao-Jun, Li Xue-Dong, Wang Zhong, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Fang.Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source. Acta Physica Sinica, 2006, 55(11): 6095-6100.doi:10.7498/aps.55.6095 |
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Li Juan, Wu Chun-Ya, Zhao Shu-Yun, Liu Jian-Ping, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Fang.Investigation on stability of microcrystalline silicon thin film transistors. Acta Physica Sinica, 2006, 55(12): 6612-6616.doi:10.7498/aps.55.6612 |
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