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Wang Jian, Chuai Rong-Yan.Theoretical relationship between p-type polysilicon thin film gauge factor and doping concentration. Acta Physica Sinica, 2017, 66(24): 247201.doi:10.7498/aps.66.247201 |
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Cao Zhen, Duan Bao-Xing, Yuan Xiao-Ning, Yang Yin-Tang.Complete three-dimensional reduced surface field super junction lateral double-diffused metal-oxide-semiconductor field-effect transistor with semi-insulating poly silicon. Acta Physica Sinica, 2015, 64(18): 187303.doi:10.7498/aps.64.187303 |
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Jiang Li-Li, Lu Zhong-Lin, Zhang Feng-Ming, Lu Xiong.Effects of low-temperature annealing phosphorous gettering process on the electrical properties of multi-crystalline silicon with a low minority carrier lifetime. Acta Physica Sinica, 2013, 62(11): 110101.doi:10.7498/aps.62.110101 |
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Su Yuan-Jun, Xu Jun, Zhu Ming, Fan Peng-Hui, Dong Chuang.Hydrogenated poly-crystalline silicon thin films deposited by inductively coupled plasma assisted pulsed dc twin magnetron sputtering. Acta Physica Sinica, 2012, 61(2): 028104.doi:10.7498/aps.61.028104 |
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Kang Kun-Yong, Deng Shu-Kang, Shen Lan-Xian, Sun Qi-Li, Hao Rui-Ting, Hua Qi-Lin, Tang Run-Sheng, Yang Pei-Zhi, Li Ming.Effect of annealing on crystalline property of poly-Si thin-film by Ge-induce crystallization. Acta Physica Sinica, 2012, 61(19): 198101.doi:10.7498/aps.61.198101 |
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Tang Zheng-Xia, Shen Hong-Lie, Jiang Feng, Fang Ru, Lu Lin-Feng, Huang Hai-Bin, Cai Hong.Mechanism of large grain polycrystalline Si preparation by aluminum induced crystallization with temperature gradient profile. Acta Physica Sinica, 2010, 59(12): 8770-8775.doi:10.7498/aps.59.8770 |
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Luo Chong, Meng Zhi-Guo, Wang Shuo, Xiong Shao-Zhen.Preparation of poly-slicon thin film by aluminum induced crystallization based on Al-salt solution. Acta Physica Sinica, 2009, 58(9): 6560-6565.doi:10.7498/aps.58.6560 |
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Li He, Li Xue-Dong, Li Juan, Wu Chun-Ya, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Li-Zhu.Investigation on the improvement of the stability and uniformity of solution-based metal-induced crystallization poly-Si using surface-embellishment. Acta Physica Sinica, 2008, 57(4): 2476-2480.doi:10.7498/aps.57.2476 |
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Qi Jing, Jin Jing, Hu Hai-Long, Gao Ping-Qi, Yuan Bao-He, He De-Yan.Effect of H2 on polycrystalline Si films deposited by plasma-enhanced CVD using Ar-diluted SiH4. Acta Physica Sinica, 2006, 55(11): 5959-5963.doi:10.7498/aps.55.5959 |
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Wu Gui-Bin, Ye Zhi-Zhen, Zhao Xing, Liu Guo-Jun, Zhao Bin-Hui.Poly-SiGe films prepared by metal-induced growth using UHVCVD system. Acta Physica Sinica, 2006, 55(7): 3756-3759.doi:10.7498/aps.55.3756 |
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Zhao Shu-Yun, Wu Chun-Ya, Liu Zhao-Jun, Li Xue-Dong, Wang Zhong, Meng Zhi-Guo, Xiong Shao-Zhen, Zhang Fang.Study on the large grain size poly-Si prepared by metal induced crystallization using nickel chemical source. Acta Physica Sinica, 2006, 55(11): 6095-6100.doi:10.7498/aps.55.6095 |
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Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Zhu Zu-Song, Wei Jun-Hong.Effect of hydrogen dilution on structure and optical properties of polycrystalline silicon films. Acta Physica Sinica, 2006, 55(5): 2523-2528.doi:10.7498/aps.55.2523 |
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Zhao Shu-Yun, Wu Chun-Ya, Li Juan, Liu Jian-Ping, Zhang Xiao-Dan, Zhang Li-Zhu, Meng Zhi-Guo, Xiong Shao-Zhen.The research on metal induced crystallization with chemical source. Acta Physica Sinica, 2006, 55(2): 825-829.doi:10.7498/aps.55.825 |
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Meng Zhi-Guo, Wu Chun-Ya, Li Juan, Xiong Shao-Zhen, Kwok Hoi S., Man Wong.Low-temperature metal-induced unilateral crystallized polycrystalline silicon thin-film transistor and gate-modulated lightly-doped drain structure. Acta Physica Sinica, 2005, 54(7): 3363-3369.doi:10.7498/aps.54.3363 |
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Zhu Zu-Song, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Qiu Gui-Ming, Huang Rui, Yu Chu-Ying.The light-stability of polycrystalline silicon films deposited at low temperatures from SiCl4/H2 mixture. Acta Physica Sinica, 2005, 54(8): 3805-3809.doi:10.7498/aps.54.3805 |
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Lin Xuan-Ying, Huang Chuang-Jun, Lin Kui-Xun, Yu Yun-Peng, Yu Chu-Ying, Huang Rui.Raman analysis of microstructure of polycrystalline silicon films deposited at low-temperatures from SiCl4-H2. Acta Physica Sinica, 2004, 53(5): 1558-1561.doi:10.7498/aps.53.1558 |
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Huang Rui, Lin Xuan-Ying, Yu Yun-Peng, Lin Kui-Xun, Yao Ruo-He, Huang Wen-Yong, Wei Jun-Hong, Wang Zhao-Kui, Yu Chu-Ying.Control of grain size during low-temperature growth of polycrystalline silicon films. Acta Physica Sinica, 2004, 53(11): 3950-3955.doi:10.7498/aps.53.3950 |
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Chen Yi-Kuang, Lin Kui-Xun, Luo Zhi, Liang Rui-Sheng, Zhou Fu-Fang.Aluminum-induced rapid crystallization of a-Si films at low temperatures in an electric field and microstructure analyses of the crystallized films. Acta Physica Sinica, 2004, 53(2): 582-586.doi:10.7498/aps.53.582 |
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Wang Liu-Jiu, Zhu Mei-Fang, Liu Feng-Zhen, Liu Jin-Long, Han Yi-Ｑin.Structual and optoelectronic properties of polycrystalline silicon thin films p repared by hot-wire chemical vapor deposition at low temperatures. Acta Physica Sinica, 2003, 52(11): 2934-2938.doi:10.7498/aps.52.2934 |
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HE DE-YAN.CONTROL OF THE SURFACE REACTIONS DURING THE LOW-TEMPERATURE GROWTH OF POLYCRYSTALLINE SILICON FILMS. Acta Physica Sinica, 2001, 50(4): 779-783.doi:10.7498/aps.50.779 |
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