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Zhang Jin-Xin, Wang Xin, Guo Hong-Xia, Feng Juan, Lü Ling, Li Pei, Yan Yun-Yi, Wu Xian-Xiang, Wang Hui.Three-dimensional simulation of total ionizing dose effect on SiGe heterojunction bipolor transistor. Acta Physica Sinica, 2022, 71(5): 058502.doi:10.7498/aps.71.20211795 |
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Zhang Jin-Xin, He Chao-Hui, Guo Hong-Xia, Tang Du, Xiong Cen, Li Pei, Wang Xin.Three-dimensional simulation study of bias effect on single event effects of SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2014, 63(24): 248503.doi:10.7498/aps.63.248503 |
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Zhou Chun-Yu, Zhang He-Ming, Hu Hui-Yong, Zhuang Yi-Qi, Lü Yi, Wang Bin, Wang Guan-Yu.Charge model of strained Si NMOSFET. Acta Physica Sinica, 2014, 63(1): 017101.doi:10.7498/aps.63.017101 |
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Liu Jing, Wu Yu, Gao Yong.Research on SiGe heterojunction bipolar transistor with a trench-type emitter. Acta Physica Sinica, 2014, 63(14): 148503.doi:10.7498/aps.63.148503 |
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Zhang Jin-Xin, Guo Hong-Xia, Guo Qi, Wen Lin, Cui Jiang-Wei, Xi Shan-Bin, Wang Xin, Deng Wei.3D simulation of heavy ion induced charge collection of single event effects in SiGe heterojunction bipolar transistor. Acta Physica Sinica, 2013, 62(4): 048501.doi:10.7498/aps.62.048501 |
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Yu Chen-Hui, Luo Xiang-Dong, Zhou Wen-Zheng, Luo Qing-Zhou, Liu Pei-Sheng.Investigation on the current collapse effect of AlGaN/GaN/InGaN/GaN double-heterojunction HEMTs. Acta Physica Sinica, 2012, 61(20): 207301.doi:10.7498/aps.61.207301 |
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Wang Xiao-Yong, Chong Ming, Zhao De-Gang, Su Yan-Mei.Two-dimensional hole gas in p-GaN/p-AlxGa1-xN heterojunctions and its influence on Ohmic contact. Acta Physica Sinica, 2012, 61(21): 217302.doi:10.7498/aps.61.217302 |
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Hu Hui-Yong, Shu Yu, Zhang He-Ming, Song Jian-Jun, Xuan Rong-Xi, Qing Shan-Shan, Qu Jiang-Tao.Collector junction depletion-layer width model of SiGeheterojunction bipolar transistor with intrinsic SiGe layer. Acta Physica Sinica, 2011, 60(1): 017303.doi:10.7498/aps.60.017303 |
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Wang Jun-Wei, Zhang Yong, Jiang Ping, Tang Wei-Hua.Fabrication and characterization of La0.7Sr0.3MnO3 sandwich structure separated by （La0.7Sr0.3MnO3）m（BiFeO3）n superlattice. Acta Physica Sinica, 2009, 58(6): 4199-4204.doi:10.7498/aps.58.4199 |
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Gu Xiao-Ling, Guo Xia, Wu Di, Li Yi-Bo, Shen Guang-Di.Dependence of properties of GaN-based light emitting diodes on the surface InGaN thickness. Acta Physica Sinica, 2008, 57(2): 1220-1223.doi:10.7498/aps.57.1220 |
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Zhao Ren, Zhang Li-Chun, Hu Shuang-Qi.Statistical entropy of the black hole. Acta Physica Sinica, 2006, 55(8): 3902-3905.doi:10.7498/aps.55.3902 |
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Xi Li, Yang Xiao-Lin, Li Cheng-Xian, Ge Shi-Hui.Transport properties and magnetoresistance of nano-polycrystalline La0.7Sr0.3MnO3－δ. Acta Physica Sinica, 2006, 55(2): 854-859.doi:10.7498/aps.55.854 |
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You Da, Xu Jin-Tong, Tang Ying-Wen, He Zheng, Xu Yun-Hua, Gong Hai-Mei.Research of two-dimensional hole gas in p-GaN/Al0.35Ga0.65N/GaN strained quantum-well. Acta Physica Sinica, 2006, 55(12): 6600-6605.doi:10.7498/aps.55.6600 |
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Zeng Zhong-Ming, Han Xiu-Feng, Du Guan-Xiang, Zhan Wen-Shan, Wang Yong, Zhang Ze.Magnetoresistance effect of double-barrier magnetic tunneling junction applied in spin transistors. Acta Physica Sinica, 2005, 54(7): 3351-3356.doi:10.7498/aps.54.3351 |
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Luo Lai-Long.Tunnel current in carbon fiber reinforced concrete. Acta Physica Sinica, 2005, 54(6): 2540-2544.doi:10.7498/aps.54.2540 |
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Xi Li, Ge Shi-Hui, Yang Xiao-Lin, Li Cheng-Xian.Transport properties and magnetoresistance effect of polycrystalline La0.7Sr0.3MnO3 at low temperatures. Acta Physica Sinica, 2004, 53(1): 260-264.doi:10.7498/aps.53.260 |
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Tao Xiang-Ming, Xia A-Gen, Ye Gao-Xiang.Anomalous hopping and tunneling effects on the conductivity ofa wedge-shaped Au film system. Acta Physica Sinica, 2004, 53(1): 239-243.doi:10.7498/aps.53.239 |
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Cao Dong-Mei, Li Yong-Fang, Bi Dong-Yan, Wang Li-Qiang, Cheng Yan-Chun.The study on quenching of the tunneling and nonlinear characteristic of energy splitting in double-well molecules with dc electric fields. Acta Physica Sinica, 2004, 53(8): 2444-2449.doi:10.7498/aps.53.2444 |
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Chen Long, He Sai-Ling, Shen Lin-Fang.Analysis for the propagation of evanescent waves and the photo tunneling effect in a multi-layered structure containing materials with negative refractive index. Acta Physica Sinica, 2003, 52(10): 2386-2392.doi:10.7498/aps.52.2386 |
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WEI YA-YI, SHEN JIN-XI, ZHENG GUO-ZHEN, GUO SHAO-LING, TANG DING-YUAN, PENG ZHENG-FU, ZHANG YUN-QIANG.STUDY OF SdH OSCILLATIONS OF 2-D ELECTRON GAS IN Si δ-DOPED AlxGa1-xAs/GaAs HETEROJUNCTION. Acta Physica Sinica, 1994, 43(2): 282-288.doi:10.7498/aps.43.282 |
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